LT1N60 - N-channel MOSFET

Longtium Microelectronics

Datasheet Details

Part number	LT1N60
Manufacturer	Longtium Microelectronics
File Size	388.49 KB
Description	N-channel MOSFET
Datasheet	LT1N60-LongtiumMicroelectronics.pdf

 This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC.

 High ruggedness  RDS(ON) (Max 9 Ω)@VGS=10V  Gate Charge (Max 6nC)  Improved dv/dt Capability  100% Avalanche Tested General.

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Published: Nov 14, 2014 |