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MCR25MG - Silicon Controlled Rectifiers

Download the MCR25MG datasheet PDF. This datasheet also covers the MCR25DG variant, as both devices belong to the same silicon controlled rectifiers family and are provided as variant models within a single manufacturer datasheet.

Description

Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate

controlled devices are needed.

Features

  • Blocking Voltage to 800 Volts.
  • On.
  • State Current Rating of 25 Amperes RMS.
  • High Surge Current Capability.
  • 300 Amperes.
  • Rugged Economical TO.
  • 220AB Package.
  • Glass Passivated Junctions for Reliability and Uniformity.
  • Minimum and Maximum Values of IGT, VGT, and IH Specified for Ease of Design.
  • High Immunity to dv/dt.
  • 100 V/μsec Minimum at 125°C.
  • These are Pb.
  • Free Devices Functional Diagram G A K Pin Out 4 TO-22.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MCR25DG-Littelfuse.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MCR25MG
Manufacturer Littelfuse
File Size 539.63 KB
Description Silicon Controlled Rectifiers
Datasheet download datasheet MCR25MG Datasheet

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Other Datasheets by Littelfuse

Part Number Description
MCR25DG Silicon Controlled Rectifiers
MCR25NG Silicon Controlled Rectifiers
MCR218-2G Silicon Controlled Rectifiers
MCR218-4G Silicon Controlled Rectifiers
MCR218-6G Silicon Controlled Rectifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MCR25DG, MCR25MG, MCR25NG Silicon Controlled Rectifiers Thyristor Datasheet Additional Information Resources Accessories Samples Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave, silicon gate−controlled devices are needed.
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