LFUSCD20120B Datasheet (Littelfuse)

LFUSCD20120B, SiC Schottky Diode

The LFUSCD series of silicon carbide (SiC) Schottky diodes has near-zero recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.

The diode series is ideal for applications where improvements in efficiency, reliability, and thermal management are desired.

LFUSCD20120B Features

* Positive temperature coefficient for safe operation and ease of paralleling

* 175 °C maximum operating junction temperature

* Enhanced surge capability

* Extremely fast, temperature-independent switching behavior

* Dramatically reduced switching losses