LTE-4216C, LTE-4206_Lite - GaAlAs T-1 Standard 3 Infrared Emitting Diode

Lite-On Technology

Datasheet Details

Part number	LTE-4216C, LTE-4206_Lite
Manufacturer	LITEON Technology
File Size	297.61 KB
Description	GaAlAs T-1 Standard 3 Infrared Emitting Diode
Datasheet	LTE-4206_Lite-OnTechnology.pdf
Note	This datasheet PDF includes multiple part numbers: LTE-4216C, LTE-4206_Lite. Please refer to the document for exact specifications by model.

The LTE-4206 series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages.

Selected to specific on-line intensity and radiant intensity ranges. Low cost plastic end looking package. Mechanically and spectrally matched to the LTR-4206 series of phototransistor. The LTE-4206 series are made with Gallium Aluminum Arsenide window layer on Gallium Arsenide infrared emitting diodes. Package Dimensions.

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Published: Feb 17, 2011 |