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LBC848CPDW1T1 - (LBC84xxPDW1T1) Dual General Purpose Transistors NPN/PNP Duals

Download the LBC848CPDW1T1 datasheet PDF. This datasheet also covers the LBC848BPDW1T1 variant, as both devices belong to the same (lbc84xxpdw1t1) dual general purpose transistors npn/pnp duals family and are provided as variant models within a single manufacturer datasheet.

Features

  • (mV/ °C) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.02 0.1 1.0 IB, BASE.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LBC848BPDW1T1_LeshanRadioCompany.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LBC848CPDW1T1
Manufacturer Leshan Radio Company
File Size 283.51 KB
Description (LBC84xxPDW1T1) Dual General Purpose Transistors NPN/PNP Duals
Datasheet download datasheet LBC848CPDW1T1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors www.datasheet4u.com NPN/PNP Duals (Complimentary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. • Device Marking: LBC846BPDW1T1 = BB LBC847BPDW1T1 = 13F LBC847CPDW1T1 = 13G LBC848BPDW1T1 = 13K LBC848CPDW1T1 = 13L LBC846BPDW1T1 LBC847BPDW1T1 LBC847CPDW1T1 LBC848BPDW1T1 LBC848CPDW1T1 6 5 4 1 2 3 SOT-363/SC-88 CASE 419B STYLE 1 MAXIMUM RATINGS - NPN Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Ð Continuous Symbol VCEO VCBO VEBO IC LBC846 LBC847 LBC848 65 80 6.0 100 45 50 6.0 100 30 30 5.
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