| Part number | L2SA1365FLT3G, L2SA1365ELT1G |
|---|---|
| Manufacturer | Leshan Radio Company |
| File Size | 677.20 KB |
| Description | General Purpose Transistor |
| Datasheet |
 L2SA1365ELT1G-LeshanRadioCompany.pdf
|
| Note |
This datasheet PDF includes multiple part numbers: L2SA1365FLT3G, L2SA1365ELT1G. Please refer to the document for exact specifications by model. |
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). Small collector to emitter saturation voltage. Excellent linearity of DC forward current gain. Super mini package for easy mounting High collector current ICM=-1A High gain band width product fT =180MHz typ We declare that the material of product compliance with RoHS requirements. We declare that the material of p
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