KSC1008 Datasheet (LZG) - SILICON NPN TRANSISTOR

KSC1008, SILICON NPN TRANSISTOR

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

(1) Pulse duration ≤300μs, duty cycle ≤2% 20 RDS(on) - On-State Resistance (mΩ) 18 16 14 12 10 8 6 4 2 0 0 2 4 RDS(on) vs VGS VGS - Gate-to-Source Voltage (V) TC = 25°C Id = 40A TC = 125ºC Id = 40A GA

KSC1008 Features

* Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resist