CS640F - N-CHANNEL MOSFET

Datasheet Details

Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 200 V ID(Tc=25℃) 18 A ID(Tc=100℃) 11.4 A IDM 72 A VGSS ±30 V EAS 250 mJ EAR 13.9 mJ IAR 18 A PD(Tc=25℃) 43 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=200V VDS=160V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA gFS VDS=40V ID=9.0A RDS(on) VGS=10V ID=9.0A VSD V.

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Published: Jul 9, 2017 |