BRF6N60 - N-Channel MOSFET

Datasheet Details

Low RDS(ON)、Low gate charge、Low Crss 、Fast switching、Improved dv/dt capability. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGS EAS EAR IAR PD(Tc=25℃) TJ,TSTG 600 5.5 3.3 22 ±30 300 12.5 5.5 80 -55 to 150 V A A A V mJ mJ A W ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA VDS=600V VGS=0V IDSS TC=125℃ VDS=480V IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=2.75A gFS VDS=40V ID=2.75A VSD VGS=0V.

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Published: Feb 23, 2014 |