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3CG970 - SILICON PNP TRANSISTOR

Features

  • Low noise, high DC current gain, high breakdown voltage. /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -120 V VCEO -120 V VEBO -5.0 V IC -100 mA IE 100 mA PC 300 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Condition VCEO ICBO IEBO hFE VCE(sat) VBE fT Cob IC=-1.0mA VCB=-120V VEB=-5.0V VCE=-6.0V IC=-10mA VCE=-6.0V VCE=-6.0V VCB=-10V IB=0 IE=0 IC=0 IC=-2.0mA IB=-1.0mA IC=-2.0mA IC=-1.0mA IE=0 f=1.0MHz Min -120 200 Rati.

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Datasheet Details

Part number 3CG970
Manufacturer LZG
File Size 234.77 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG970 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SA970(3CG970) PNP /SILICON PNP TRANSISTOR : 。 Purpose: Low noise audio amplifier applications. : ,,。 Features: Low noise, high DC current gain, high breakdown voltage. /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -120 V VCEO -120 V VEBO -5.0 V IC -100 mA IE 100 mA PC 300 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Condition VCEO ICBO IEBO hFE VCE(sat) VBE fT Cob IC=-1.0mA VCB=-120V VEB=-5.0V VCE=-6.0V IC=-10mA VCE=-6.0V VCE=-6.0V VCB=-10V IB=0 IE=0 IC=0 IC=-2.0mA IB=-1.0mA IC=-2.0mA IC=-1.0mA IE=0 f=1.0MHz Min -120 200 Rating Typ -0.65 100 4.0 VCE=-6.0V IC=-0.1mA f=10Hz Rg=10KΩ NF VCE=-6.0V IC=-0.1mA f=1.0KHz Rg=10KΩ VCE=-6.0V IC=-0.1mA f=1.0KHz Rg=100Ω 3.
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