3CG624 - SILICON PNP TRANSISTOR

Datasheet Details

High hFE, complementary pair with 2SD596(3DG596M). /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -25 V VEBO -5.0 V IC -700 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Test Condition VCB=-30V VEB=-5.0V VCE=-1.0V VCE=-1.0V IC=-700mA VCE=-6.0V VCE=-6.0V VCB=-6.0V IE=0 IC=0 IC=-100mA IC=-700mA IB=-70mA IC=-10mA IE=10mA IE=0 f=10MHz Min 110 50 -0.6 Rating Typ 200 -0.

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Published: Jul 15, 2017 |