3CG562M - SILICON PNP TRANSISTOR

Datasheet Details

Excellent hFE linearity, complementary pair with 2SC1959M(3DG1959M). /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -35 V VCEO -30 V VEBO -5.0 V IC -500 mA IB -100 mA PC 400 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Test Condition VCB=-35V VEB=-5.0V VCE=-1.0V VCE=-6.0V IC=-100mA VCE=-1.0V VCE=-6.0V VCB=-6.0V IE=0 IC=0 IC=-100mA IC=-400mA IB=-10mA IC=-100mA IC=-20mA IE=0 f=1.0MHz M.

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Published: Jul 15, 2017 |