3CG1376 - SILICON PNP TRANSISTOR

Datasheet Details

High breakdown voltage, good hFE linearity, complementary to 2SC3478(3DG3478). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -200 V VCEO -180 V VEBO -5.0 V IC -100 mA ICP -200 mA IB -20 mA PC 750 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE VCE(sat) VBE(sat) VBE fT Cob ton toff VCB=-200V IE=0 VEB=-4.0V IC=0 VCE=-10V IC=-50mA IC=-50mA VCE=-10V VCE=-10V IC=-10mA IB=-5.0mA IB=-5.0mA IC=-10mA.

📁 3CG1376 Similar Datasheet

3CG1346 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
3CG1980 - PNP Silicon Transistor (Kodenshi)
3CG3906 - PNP EPITAXIAL SILICON TRANSISTOR (JILIN SINO)
3CG5401 - PNP EPITAXIAL SILICON TRANSISTOR (JILIN SINO)
3CG5610 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
3CG640 - PNP Silicon High Frequency Middle Power Transistor (Qunli Electric)
3CG708 - SILICON PNP TRANSISTOR (BLUE ROCKET)
3CG751 - TO-92MOD Plastic-Encapsulate Transistors (TY Semiconductor)

Other Datasheets by LZG

Published: Aug 8, 2017 |