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3CA1184 - SILICON PNP TRANSISTOR

Features

  • Low VCE(sat),complements the 2SD1760(3DA1760). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC PC PC (Tc=25℃) Tj Tstg -60 -50 -5.0 -3.0 1.0 15 150 -55～150 V V V A W W ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob IC=-50μA IC=-1.0mA IE=-50μA VCB=-40V VEB=-4.0V VCE=-3.0V IC=-2.0A IC=-1.5A VCE=-5.0V VCB=-10V IC=-0.5A IE=0 IE=0 IB=0 IC=0 IE=0 IC=0 IC=-0.5A IB=-.

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Datasheet Details

Part number 3CA1184
Manufacturer LZG
File Size 213.21 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CA1184 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB1184(3CA1184) :。 PNP /SILICON PNP TRANSISTOR Purpose: Power amplifier applications。 :, 2SD1760(3DA1760) 。 Features: Low VCE(sat),complements the 2SD1760(3DA1760). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC PC PC (Tc=25℃) Tj Tstg -60 -50 -5.0 -3.0 1.0 15 150 -55～150 V V V A W W ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob IC=-50μA IC=-1.0mA IE=-50μA VCB=-40V VEB=-4.0V VCE=-3.0V IC=-2.0A IC=-1.5A VCE=-5.0V VCB=-10V IC=-0.5A IE=0 IE=0 IB=0 IC=0 IE=0 IC=0 IC=-0.5A IB=-0.2A IB=-0.15A f=30MHz f=1.0MHz P:82～180 -60 -50 -5.0 -1.0 -1.0 82 390 -1.0 -1.2 70 50 Q:120～270 R:180～390 V V V μA μA V V MHz pF hFE /hFE Classifications: http://www.lzg.
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