LUF12N65 - 650V N-Channel Enhancement Mode MOSFET

Datasheet Details

Part number	LUF12N65
Manufacturer	LUL
File Size	175.16 KB
Description	650V N-Channel Enhancement Mode MOSFET
Datasheet	LUF12N65-LUL.pdf

These enhancement mode power filed effect transistors havebeen advanced technology design to provide low on-state resistance, high avalanche energy.

12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A.
Low On-state Resistance.
Fast Switching.
Low Gate Charge.
Fully Characterized Avalanche Voltage and Current Marking and Order Information TYPE LUP12N65 LUF12N65.

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Published: Mar 16, 2015 |