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GPF5N10, GPF5N10-LITE N-Channel 100V Enhancement Mode Power MOSFET

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Description

N-Channel 100V Enhancement Mode Power MOSFET General .
GPF5N10 use advanced LSFGMOS technology to provide low RDS(ON),low gate charge, fast switching and excellent avalanche characteristics.

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This datasheet PDF includes multiple part numbers: GPF5N10, GPF5N10-LITE. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
GPF5N10, GPF5N10-LITE
Manufacturer
LITE-ON
File Size
427.50 KB
Datasheet
GPF5N10-LITE-ON.pdf
Description
N-Channel 100V Enhancement Mode Power MOSFET
Note
This datasheet PDF includes multiple part numbers: GPF5N10, GPF5N10-LITE.
Please refer to the document for exact specifications by model.

Features

* Low RDS(ON) & FOM
* Extremely low switching loss
* Excellent stability and uniformity
* Easy to drive
* Marking: GPF5N10
* Qualified according to AEC-Q101
* Weight: 2070mg
* RoHS Compliant GPF5N10 BVDSS=100V RDS(ON) ≦5mΩ@VGS=10V ID,p

GPF5N10 Distributors

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