Datasheet4U Logo Datasheet4U.com

KRC285S - EPITAXIAL PLANAR NPN TRANSISTOR

Download the KRC285S datasheet PDF. This datasheet also covers the KRC281S variant, as both devices belong to the same epitaxial planar npn transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ. ) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ. ) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KRC281S_KoreaElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KRC285S
Manufacturer Korea Electronics
File Size 343.90 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KRC285S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KRC285U EPITAXIAL PLANAR NPN TRANSISTOR KEC
KRC281U EPITAXIAL PLANAR NPN TRANSISTOR KEC
KRC282U EPITAXIAL PLANAR NPN TRANSISTOR KEC
KRC283U EPITAXIAL PLANAR NPN TRANSISTOR KEC
KRC284U EPITAXIAL PLANAR NPN TRANSISTOR KEC

Other Datasheets by Korea Electronics

Part Number Description
KRC285M (KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR
KRC281M (KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR
KRC281S EPITAXIAL PLANAR NPN TRANSISTOR
KRC282M (KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR
KRC282S EPITAXIAL PLANAR NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. EQUIVALENT CIRCUIT C R1 B KRC281S~KRC286S EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3.
Published: |