SI4558DY - Complementary Power Trench MOSFET

Kexin

Datasheet Details

Part number	SI4558DY
Manufacturer	Kexin
File Size	1.47 MB
Description	Complementary Power Trench MOSFET
Datasheet	SI4558DY-Kexin.pdf

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N-Channel：VDS=30V ID=6A.
RDS(ON) ＜ 40mΩ (VGS = 10V).
RDS(ON) ＜ 60mΩ (VGS = 4.5V).
P-Channel：VDS=-30V ID=-6A.
RDS(ON) ＜ 40mΩ (VGS =-10V).
RDS(ON) ＜ 70mΩ (VGS =-4.5V) SOP-8 +0.040.21 -0.02 1.50 0.15 1 Source1 2 Gate1 3 Source2 4 Gate2 5 Drain 6 Drain 7 Drain 8 Drain D S2 S1.
Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current @ TJ=150℃ (Note.1) Pulsed Drain Current Power Dissipation Therma.

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Published: Nov 30, 2016 |