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MMBD1701A - High Conductance Low Leakage Diode

Download the MMBD1701A datasheet PDF. This datasheet also covers the MMBD1701 variant, as both devices belong to the same high conductance low leakage diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit Working lnverse voltage WIV 20 V Average rectified current IO 50 mA DC forward current IF 150 mA recurrent peak forward current if 150 mA Peak forward surge current pulse width = 1.0 second if 250 mA Storage temperature range Tstg -55 to + 150 Operating junction temperature TJ 150 Total device dissipation Derate above 25 350 mW PD 2.8.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MMBD1701-Kexin.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MMBD1701A High Conductance Low Leakage Diode Fairchild
MMBD1701 High Conductance Low Leakage Diode Fairchild
MMBD1703 High Conductance Low Leakage Diode Fairchild
MMBD1703A High Conductance Low Leakage Diode Fairchild
MMBD1704 High Conductance Low Leakage Diode Fairchild

Other Datasheets by Kexin Semiconductor

Part Number Description
MMBD1701 High Conductance Low Leakage Diode
MMBD1703 High Conductance Low Leakage Diode
MMBD1703A High Conductance Low Leakage Diode
MMBD1704 High Conductance Low Leakage Diode
MMBD1704A High Conductance Low Leakage Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type High Conductance Low Leakage Diode MMBD1701/A,MMBD1703/A MMBD1704/A,MMBD1705/A Diodes Features +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit Working lnverse voltage WIV 20 V Average rectified current IO 50 mA DC forward current IF 150 mA recurrent peak forward current if 150 mA Peak forward surge current pulse width = 1.0 second if 250 mA Storage temperature range Tstg -55 to + 150 Operating junction temperature TJ 150 Total device dissipation Derate above 25 350 mW PD 2.8 mW/ Thermal resistance, Junction to ambient R JA 357 /W MMBD1701/A /1703/A-1705/A* * Device mounted on glass epoxy 1.6" 1.6" 0.06", mounting pad for collector lead min. 0.93in2. 0-0.
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