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KPM2015 - P-Channel MOSFET

Features

  • s.
  • VDS (V) =-20V.
  • ID =-2.4 A.
  • RDS(ON) ＜ 110mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 150mΩ (VGS =-2.5V).
  • Supper high density cell design +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 D 3 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 12 GS.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) Ta=25°C Ta=.

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SMD Type MOSFET P-Channel MOSFET WPM2015 (KPM2015) ■ Features ● VDS (V) =-20V ● ID =-2.4 A ● RDS(ON) ＜ 110mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5V) ● Supper high density cell design +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 D 3 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 12 GS ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) Ta=25°C Ta=70°C Power Dissipation (Note.1) Ta=25°C Ta=70°C Continuous Drain Current (Note.2) Ta=25°C Ta=70°C Power Dissipation Pulsed Drain Current (Note.2) (Note.3) Ta=25°C Ta=70°C Thermal Resistance.Junction- to-Ambient Thermal Resistance.
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