Ideal for Medium Power Amplification and Switching.
Dual Transistors (PNP+PNP).
Complementary NPN Type Available(MMDT 5551).
Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature range.
Electrical Characteristics Ta = 25℃
Parameter Collector- base breakdown voltage.
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SMD Type
PNP Transistors MMDT5401 (KMDT5401)
Transistors
■ Features
● Epitaxial Planar Die Construction ● Ideal for Medium Power Amplification and Switching ● Dual Transistors (PNP+PNP) ● Complementary NPN Type Available(MMDT 5551)
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature range
■ Electrical Characteristics Ta = 25℃
Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Noise Figure
Collector output capacitan
KMDT5401 Datasheet