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KBSS5540Z - PNP Transistors

Features

  • s.
  • Low collector-emitter saturation voltage.
  • High current capability.
  • Improved device reliability due to reduced heat generation. 2, 4 1 3 SOT-223 6.50±0.2 3.00±0.1 4 10 Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 123 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Base 2.Collector 3.Emitter 4.Collector.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Peak.

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SMD Type PNP Transistors PBSS5540Z (KBSS5540Z) Transistors ■ Features ● Low collector-emitter saturation voltage ● High current capability ● Improved device reliability due to reduced heat generation. 2, 4 1 3 SOT-223 6.50±0.2 3.00±0.1 4 10 Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 123 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Base 2.Collector 3.Emitter 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Peak Collector Current Peak Base Current Collector Power Dissipation (Note.1) (Note.2) thermal resistance from junction to ambient (Note.
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