High fT: fT=400MHz. PNP Silicon Epitaxia 2SA1608
TransistIoCrs
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PT Tj Tstg
Rating -60 -40 -5 -500 150 150
-55 to +150
Unit V V V mA
mW
1 Emitter 2 Base 3 Collector
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain.