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2SD1621 - NPN Epitaxial Planar Silicon Transistor

Features

  • Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature.
  • Mounted on ceramic board(250mm2X0.8mm) Symbol VCBO VCE.

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SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SD1621 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 30 25 6 2 5 500 1.3 150 -55 to +150 Unit V V V A A mW W www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.
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