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2SB1308 - Power Transistor

Features

  • Low saturation voltage, typically VCE(sat) = -0.45V (Max. ) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature.
  • Single pulse, Pw=10ms Symbol VCBO VCEO VEBO IC ICP.
  • PC Tj Tstg Rating -30 -20 -6 -3 -5 0.5 150 -55 to +150 Unit V V V A A W Electrica.

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SMD Type Power Transistor 2SB1308 Transistors Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature * Single pulse, Pw=10ms Symbol VCBO VCEO VEBO IC ICP * PC Tj Tstg Rating -30 -20 -6 -3 -5 0.
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