STC4350Q Datasheet - KODENSHI

STC4350Q, NPN Silicon Transistor

Features

* High collector breakdown voltage : VCEO = 50V
* Low collector saturation voltage : VCE(sat)= 0.35V(Max. )
* “Green” device and RoHS compliant device
* Available in full lead (Pb)-free device Ordering Information Type NO. STC4350Q Marking STC4350 STC4350Q NPN Silicon Transistor P

Applications

* Power amplifier application

STC4350Q-KODENSHI.pdf