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STC5551F NPN Silicon Transistor

STC5551F Description

STC5551F NPN Silicon Transistor .
General purpose amplifier. High voltage application PIN Connection Features. High collector breakdown voltage : VCBO =.

STC5551F Features

* High collector breakdown voltage : VCBO = 180V, VCEO = 160V
* Low collector saturation voltage : VCE(sat)=0.5V(MAX. ) SOT-89 Ordering Information Type No. STC5551F N51: DEVICE CODE, Marking N51
* YWW
* : hFE rank, YWW(Y Package Code SOT-89 : Year code, WW : Weekly

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Datasheet Details

Part number
STC5551F
Manufacturer
KODENSHI KOREA
File Size
338.44 KB
Datasheet
STC5551F_KODENSHIKOREA.pdf
Description
NPN Silicon Transistor

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NPN Silicon Transistor KODENSHI KOREA
KODENSHI KOREA STC5551F-like datasheet