KU024N06P N-ch Trench MOS FET

KEC

Description

SEMICONDUCTOR TECHNICAL DATA General .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

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Datasheet Specifications

Part number: KU024N06P
Manufacturer: KEC
File Size: 1.05 MB
Datasheet: KU024N06P_KEC.pdf
Description: N-ch Trench MOS FET

Features

* VDSS= 60V, ID= 200A Drain-Source ON Resistance : RDS(ON)=2.4m (Max. ) @VGS = 10V KU024N06P N-ch Trench MOS FET K MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche En

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KU024N06P N-ch Trench MOS FET KEC

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