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SEMICONDUCTOR
TECHNICAL DATA
HIGH SPEED SWITCHING APPLICATION.
FEATURES High Frequency Characteristics : fT=500MHz(Min.) (VCE=10V, f=100MHz, IC=10mA). Excellent Switching Characteristics.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25 ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg
RATING 40 15 4.5 500 625 150
-55 150
UNIT V V V mA mW
L M
C
KTH2369/A
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
A
K
E
G
D
H
F
F
1 23
J
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. COLLECTOR 2. BASE 3.
KTH2369A Datasheet
