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KTD2066 - EPITAXIAL PLANAR NPN TRANSISTOR

Features

  • High DC Current Gain : hFE=500 1500(IC=1A). Low Collector Saturation Voltage : VCE(sat)=0.35V(Max. ) (IC=3A).

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Datasheet Details

Part number KTD2066
Manufacturer KEC
File Size 451.39 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTD2066 Datasheet

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA KTD2066 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. LAMP SOLENOID DRIVER APPLICATION. FEATURES High DC Current Gain : hFE=500 1500(IC=1A). Low Collector Saturation Voltage : VCE(sat)=0.35V(Max.) (IC=3A). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO Emitter-Base Voltage VEBO Collector Current DC Pulse IC ICP Base Current IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tstg RATING 100 80 7 5 8 1 2 30 150 -55 150 UNIT V V V A A W K A S E LL M DD NN J GF B P C DIM MILLIMETERS A 10.0+_ 0.3 B 15.0+_ 0.3 C 2.70 +_ 0.3 D 0.76+0.09/-0.05 E Φ3.2 +_ 0.2 F 3.0+_ 0.3 G 12.0+_ 0.3 H 0.5+0.1/-0.05 J 13.6 +_ 0.
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