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SEMICONDUCTOR
TECHNICAL DATA
AUDIO MUTING APPLICATION.
FEATURES ᴌHigh Emitter-Base Voltage : VEBO=12V(Min.). ᴌHigh Reverse hFE
: Reverse hFE=20(Min.) (VCE=2V, IC=4mA). ᴌLow on Resistance :RON=0.6ή(Typ.) (IB=1mA).
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC IB PC Tj
Storage Temperature Range
Tstg
RATING 25 20 12 300 30 625 150
-55ᴕ150
UNIT V V V mA mA
mW ᴱ ᴱ
L M
C
KTD1302
EPITAXIAL PLANAR NPN TRANSISTOR
BC
JA
K
E G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. EMITTER 2. COLLECTOR 3.