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KTD1302 - EPITAXIAL PLANAR NPN TRANSISTOR

Features

  • ᴌHigh Emitter-Base Voltage : VEBO=12V(Min. ). ᴌHigh Reverse hFE : Reverse hFE=20(Min. ) (VCE=2V, IC=4mA). ᴌLow on Resistance :RON=0.6ή(Typ. ) (IB=1mA).

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Datasheet Details

Part number KTD1302
Manufacturer KEC
File Size 69.04 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTD1302 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA AUDIO MUTING APPLICATION. FEATURES ᴌHigh Emitter-Base Voltage : VEBO=12V(Min.). ᴌHigh Reverse hFE : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). ᴌLow on Resistance :RON=0.6ή(Typ.) (IB=1mA). MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING 25 20 12 300 30 625 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ L M C KTD1302 EPITAXIAL PLANAR NPN TRANSISTOR BC JA K E G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3.
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