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SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES ᴌComplementary to KTB817. ᴌRecommended for 60W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Collector Power Dissipation (Tc=25ᴱ)
Junction Temperature
Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg
RATING 160 140 6 12 15 100 150
-55ᴕ150
UNIT V V V
A
W ᴱ ᴱ
E
KTD1047
TRIPLE DIFFUSED NPN TRANSISTOR
AQ
B K
F I
J GH
C
D d
PP
1 23 1. BASE
L
DIM MILLIMETERS
A 15.9 MAX
B 4.8 MAX C 20.0+_ 0.3 D 2.0+_ 0.3
d 1.0+0.3/-0.25
E 2.0
F 1.0
G 3.3 MAX
H 9.0
I 4.5
T MJ
2.0
K 1.8 MAX L 20.5+_ 0.5
M 2.8 P 5.45+_ 0.2 Q Φ3.2+_ 0.2
T 0.6+0.3/-0.1
2.