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J
BP E
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES ᴌ1W (Mounted on Ceramic Substrate). ᴌSmall Flat Package. ᴌComplementary to KTA1664.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
Collector Power Dissipation
Junction Temperature
VCBO VCEO VEBO
IC IB PC PC* Tj
35 30 5 800 160 500 1 150
Storage Temperature Range
Tstg -55ᴕ150
PC* : KTC4376 mounted on ceramic substrate (250mm2x0.8t)
UNIT V V V mA mA
mW W ᴱ ᴱ
KTC4376
EPITAXIAL PLANAR NPN TRANSISTOR
AC H
G
DD K
FF
1 23
DIM A B C D E F G H J K
MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX
0.45+0.15/-0.10
4.25 MAX 1.50+_ 0.10 0.40 TYP 1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE 2. COLLECTOR (HEAT SINK) 3.
KTC4376 Datasheet
