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KTC3770S - EPITAXIAL PLANAR NPN TRANSISTOR

Features

  • Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB (f=1GHz).

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB (f=1GHz). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Range Tstg RATING 20 12 3 100 150 150 -55 150 UNIT V V V mA mW KTC3770S EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3.
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