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KTC3571S - EPITAXIAL PLANAR NPN TRANSISTOR

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SEMICONDUCTOR TECHNICAL DATA FEATURE Low Collector-Emitter Saturation Voltage VCE(sat). High Collector Current Capability : IC and ICP. Higher Efficiency Leading to Less Heat Generation. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation** Junction Temperature VCBO VCEO VEBO IC ICP IB PC Tj 130 V 100 V 5V 1 A 3 300 mA 350 mW 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted on 99.5% Alumina 10 8 0.6mm. MARKING Lot No. KMBType Name KTC3571S EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.
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