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KTC3226 - EPITAXIAL PLANAR NPN TRANSISTOR

Features

  • ᴌHigh DC Current Gain and Excellent hFE Linearity : hFE(1)=140ᴕ600 (VCE=1V, IC=0.5A) : hFE(2)=70(Min. ), 200(Typ. ) (VCE=1V, IC=2A). ᴌLow Saturation Voltage : VCE(sat)=0.5V(Max. ) (IC=2A, IB=50mA).

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA STROBO FLASH APPLICATION. HIGH CURRENT APLICATION. FEATURES ᴌHigh DC Current Gain and Excellent hFE Linearity : hFE(1)=140ᴕ600 (VCE=1V, IC=0.5A) : hFE(2)=70(Min.), 200(Typ.) (VCE=1V, IC=2A). ᴌLow Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=2A, IB=50mA). MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current DC Pulse (Note1) Emitter Current Collector Power Dissipation Junction Temperature VCBO VCES VCEO VEBO IC ICP IE PC Tj Storage Temperature Range Tstg Note 1 : Pulse Width⏊10ms, Duty Cycle⏊30% RATING 30 30 10 6 2 5 -2 1 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ O D KTC3226 EPITAXIAL PLANAR NPN TRANSISTOR BD G JA R P DEPTH:0.2 C Q K FF HH M EM 123 HL NN 1.
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