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KTC3112 - EPITAXIAL PLANAR NPN TRANSISTOR

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE ᴌHigh DC Current Gain : hFE=600ᴕ3600. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB PC Tj Tstg RATING 50 50 5 150 30 625 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ L M C KTC3112 EPITAXIAL PLANAR NPN TRANSISTOR BC JA K E G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3.
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