Datasheet4U Logo Datasheet4U.com

KRC281U - EPITAXIAL PLANAR NPN TRANSISTOR

Features

  • High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ. ) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ. ) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. A J KRC281U~KRC286U.

📥 Download Datasheet

Datasheet Details

Part number KRC281U
Manufacturer KEC
File Size 45.80 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KRC281U Datasheet
Other Datasheets by KEC

Full PDF Text Transcription

Click to expand full text
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. A J KRC281U~KRC286U EPITAXIAL PLANAR NPN TRANSISTOR www.DataSheet4U.com E M B M D 3 2 1 C EQUIVALENT CIRCUIT C B R1 H N K 1. EMITTER 2. BASE 3. COLLECTOR N DIM A B C D E G H J K L M N MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + 0.3+0.10/-0.05 _ 0.20 2.10 + 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 0.42 0.
Published: |