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KP11N60 - N-Channel MOSFET

Download the KP11N60 datasheet PDF. This datasheet also covers the KP11N60F variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for active power factor correction and switching mode power supplies.

Features

  • hVDSS=600V, ID=11A hDrain-Source ON Resistance : RDS(ON)(Max)=0.38ʃ @VGS=10V hQg(typ. )= 20nC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KP11N60F_KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KP11N60
Manufacturer KEC
File Size 407.51 KB
Description N-Channel MOSFET
Datasheet download datasheet KP11N60 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA KP11N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES hVDSS=600V, ID=11A hDrain-Source ON Resistance : RDS(ON)(Max)=0.38ʃ @VGS=10V hQg(typ.
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