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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES
VDSS(Min.)= 500V, ID= 9A RDS(ON)=0.75 Qg(typ.) =19nC (Max) @VGS =10V
KF9N50P/F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF9N50P
DIM
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 Tj Tstg SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD 125 1.0 150 -55 150 9 5.5 24 200 4 4.
KF9N50P Datasheet
