KF4N80F Datasheet - KEC

KF4N80F N-CHANNEL MOS FIELD EFFECT TRANSISTOR

A KF4N80F N CHANNEL MOS FIELD EFFECT TRANSISTOR C F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supp.

KF4N80F Features

* VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)(Max)=2.6 Qg(typ.)= 17nC @VGS=10V D N N H 1 2 3 1. GATE 2. DRAIN 3. SOURCE Q A B C D E F G H J K L M N O Q R _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 0.2 12.57 + _ 0.1 0.5 + _ 0.5 13.0 + _ 0.1 3.23 +

KF4N80F Datasheet (382.76 KB)