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KDV202E - SILICON EPITAXIAL PLANAR DIODE

Features

  • High Capacitance Ratio : C0.2V/C2.3V =2.5(Min. ) Low Series Resistance : rs=0.6 (Max. ) Small Package : ESC.

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Datasheet Details

Part number KDV202E
Manufacturer KEC
File Size 26.60 KB
Description SILICON EPITAXIAL PLANAR DIODE
Datasheet download datasheet KDV202E Datasheet
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA FM RADIO BAND TUNING APPLICATION. FEATURES High Capacitance Ratio : C0.2V/C2.3V =2.5(Min.) Low Series Resistance : rs=0.6 (Max.) Small Package : ESC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL VR Tj Tstg RATING 6 150 -55 150 UNIT V KDV202E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B A C 1 2 D 1. ANODE 2. CATHODE E F DIM A B C D E F MILLIMETERS 1.60+_ 0.10 1.20+_ 0.10 0.80+_ 0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 Marking Type Name ESC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Current Capacitance Capacitance Ratio IR1 IR2 C0.2V C2.3V C0.2V/C2.3V Series Resistance rS TEST CONDITION VR=6V VR=6V, Tj=85 VR=0.2V, f=1MHz VR=2.
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