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SEMICONDUCTOR
TECHNICAL DATA
KDS121E
SILICON EPITAXIAL PLANAR DIODE
ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES °§ Small Package °§ Low Forward Voltage °§ Fast Reverse Recovery Time °§ Small Total Capacitance
: ESM. : VF=0.9V (Typ.). : trr=1.6ns(Typ.).
A G H
2 1
E B
D 3
DIM A B
C D E G H J
: CT=0.9pF (Typ.).
MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 +
0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + 0.50 _ 0.05 0.13 +
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VRM VR IFM IO IFSM PD Tj Tstg
RATING 85 80 300 * 100 * 2* 100 150 -55°≠150
UNIT V V mA mA A mW °… °…
1. ANODE 1 2. ANODE 2 3.
KDS121E Datasheet
