K3520PQ-XH Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

KEC

Description

SEMICONDUCTOR TECHNICAL DATA General .
The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.

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Datasheet Specifications

Part number: K3520PQ-XH
Manufacturer: KEC
File Size: 72.12 KB
Datasheet: K3520PQ-XH_KEC.pdf
Description: Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Features

* ¡⁄ Low on-state resistance RDS(ON)1 = 16m
* MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17m
* MAX (VGS=3.9V, IS=1.0A) RDS(ON)3 = 20m
* MAX (VGS=3.5V, IS=1.0A) G2 1080 S1 G1 BOTTOM : COMMON DRAIN _10 m 180 + MAXIMUM RATING (Ta=25¡ CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Storage T

K3520PQ-XH Distributors

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K3520PQ-XH Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor KEC

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