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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction , electronic lamp ballasts based on half bridge topology, DC/DC Converters and switching mode power supplies. FEATURES
VDSS = 60V, ID = 60A Drain-Source ON Resistance : RDS(ON) =13.2m (Max.) @VGS = 10V Qg(typ.) = 48nC
D N N A
KF60N06P
N CHANNEL MOS FIELD EFFECT TRANSISTOR
O C F
E
G B Q
DIM MILLIMETERS _ 0.2 9.9 + A B C D E
I K M L J H P
F G H I J K L M N O
15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.
F60N06P Datasheet
