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E35A2CDS - STACK SILICON DIFFUSED DIODE

Download the E35A2CDS datasheet PDF. This datasheet also covers the E35A2CDR variant, as both devices belong to the same stack silicon diffused diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Average Forward Current : IO=35A. Reverse Voltage : 200V(Min).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (E35A2CDR-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number E35A2CDS
Manufacturer KEC
File Size 372.40 KB
Description STACK SILICON DIFFUSED DIODE
Datasheet download datasheet E35A2CDS Datasheet

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Other Datasheets by KEC

Part Number Description
E35A2CDR STACK SILICON DIFFUSED DIODE
E35A2CBR STACK SILICON DIFFUSED DIODE
E35A2CBS STACK SILICON DIFFUSED DIODE
E35A2CPR STACK SILICON DIFFUSED DIODE
E35A2CPS STACK SILICON DIFFUSED DIODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=35A. Reverse Voltage : 200V(Min) POLARITY E35A2CDS E35A2CDR (+ Type) (- Type) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Average Forward Current Peak 1 Cycle Surge Current Repetitive Peak Revese Voltage Junction Temperature Storage Temperature Range IF(AV) IFSM VRRM Tj Tstg RATING 35 350 (60Hz) 200 -40 200 -40 200 UNIT A A V E35A2CDS, E35A2CDR STACK SILICON DIFFUSED DIODE FE L1 CD L2 G B A DIM A B C D MILLIMETERS 9.5+_ 0.2 8.4+_ 0.2 1.2 1 DIM E F G L1 MILLIMETERS 3.1+_ 0.1 Φ1.5 R0.5 5+_ 0.4 DIM TYPE POLARITY L2 S R MILLIMETERS 19.0+_ 1.0 23.0+_ 1.