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13N60N KF13N60N

13N60N Description

SEMICONDUCTOR TECHNICAL DATA General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characte.

13N60N Features

* VDSS(Min. )= 600V, ID= 13A Drain-Source ON Resistance : RDS(ON)=0.56(Max. ) Qg(typ. ) =36nC @VGS =10V d D E M P P T 1 2 3 MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Dio

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Datasheet Details

Part number
13N60N
Manufacturer
KEC
File Size
88.32 KB
Datasheet
13N60N-KEC.pdf
Description
KF13N60N

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KF13N60N KEC
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