KHB6D0N40P Datasheet - KEC semiconductor

KHB6D0N40P (KHB6D0N40F / KHB6D0N40P) High Voltage MOSFETs

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. A KHB6D0N40P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR O C F .

KHB6D0N40P Features

* VDSS=400V, ID=6.0A Drain-Source ON Resistance : RDS(ON)=1.0 Qg(typ.)=32nC @VGS=10V K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 J 13.08 + K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2

KHB6D0N40P Datasheet (104.53 KB)