PT4435 - P-Channel MOSFET

Jin Yu Semiconductor

Datasheet Details

Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D 8 D 7 D 6 D 5 1 S S 2 S 3 4 G http://www. DataSheet4U. net/ REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Contin.

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Published: Feb 4, 2013 |