2SJ355 Datasheet (JINGAO) - P-Channel MOSFET

2SJ355, P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

2SJ355 Features

* -30V,-5A, RDS(ON) =40mΩ @VGS =-10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* MB / VGA / Vcore

* Load Switch

* Hand-Held Instrument Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Para